S. Schwehr, T. Fuchs, K. Dzahini, B. Boutherin, M. Le Helley
{"title":"High speed CMOS operational amplifier","authors":"S. Schwehr, T. Fuchs, K. Dzahini, B. Boutherin, M. Le Helley","doi":"10.1109/EUASIC.1991.212847","DOIUrl":null,"url":null,"abstract":"In this paper authors present a new approach to fast CMOS opamp design. This approach benefits from the advantages offered by full complementary implementations of well known subcircuits, to enhance the speed of such an operational amplifier and to better organize and economize layout generation. Since the consequent structured topology of full complementary circuits like the present opamp is well suited to a cell based design, simulation time and layout generation time could have been decreased by a factor of almost five. This results in an opamp which exhibits a slew-rate of 800 V/ mu s (for a positive input step) and whose mask layout was done in three days.<<ETX>>","PeriodicalId":118990,"journal":{"name":"Euro ASIC '91","volume":"138 3","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1991-05-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Euro ASIC '91","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EUASIC.1991.212847","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
In this paper authors present a new approach to fast CMOS opamp design. This approach benefits from the advantages offered by full complementary implementations of well known subcircuits, to enhance the speed of such an operational amplifier and to better organize and economize layout generation. Since the consequent structured topology of full complementary circuits like the present opamp is well suited to a cell based design, simulation time and layout generation time could have been decreased by a factor of almost five. This results in an opamp which exhibits a slew-rate of 800 V/ mu s (for a positive input step) and whose mask layout was done in three days.<>
本文提出了一种快速设计CMOS运算放大器的新方法。这种方法得益于众所周知的子电路的完全互补实现所提供的优势,以提高这种运算放大器的速度,并更好地组织和节省布局生成。由于完整互补电路(如当前的opamp)的结构拓扑非常适合基于单元的设计,因此模拟时间和布局生成时间可以减少近五倍。这使得opamp的旋转速率为800 V/ mu s(对于正输入步长),其掩模布局在三天内完成。