Highly Reliable CW and Pulsed GaAs Read Diodes

Abstract

The development of GaAs Read Impatt diodes has resulted in the availability of reliable, long life, highly efficient CW and pulsed medium power devices. The use of a hi-lo Read structure with a grown GaAs p-n junction provides for the long life and highly efficient medium power devices. CW efficiencies in excess of 15% are routinely available at power levels of 2-3 watts. Pulse power outputs above 15 watts and with efficiencies of 20% are standard. For the pulsed devices, the results were obtained with a duty cycle of 25%. With these performances, lifetimes can be predicted to be in the 107 hour range for junction temperatures of 200°.