Analytical Model and Simulation for AlGaN/GaN High Electron Mobility Transistor

Abstract

Based on the charge control theory, a accurate analytical model of I-V characteristics for AlGaN/GaN high electron mobility transistor (HEMT) is presented considering the relationship between self-heating effect and polarization, electron mobility, velocity saturation, conduction band discontinuity, doping concentration, channel temperature. The comparison between simulations and physical calculation shows a good agreement. The model is simple in calculations, suitable for design of microwave device and circuit.