Optimizing of the material structure in AlGaN/GaN HEMTs through the energy band engineering approach

Abstract

The performance of 2DEG in AlGaN/GaN HEMTs was investigated using the self-consistent solution of Poisson and Schrödinger equations, which in the simulation, the effects of the spontaneous and piezoelectric polarization were included. An optimized structure with cap layer yielded an increase in effective barrier height, with little penalty in sheet carrier concentration. The structure due to AlN interlayer was investigated by using the energy band calculation.