ICCAD-2013 CAD contest in mask optimization and benchmark suite

Shayak Banerjee, Zhuo Li, S. Nassif
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引用次数: 68

Abstract

Optical microlithography is the technique of printing a set of shapes on a wafer using light transmitted through a template called a mask. Repeatedly printing and stacking such shapes on top of each other to build electrical circuits allows us to manufacture chips in high volume. However this technique has now reached its fundamental physical limits of resolution. Current 193nm wavelength light is no longer sufficient to reliably transfer patterns which are now in the sub-100nm dimensional range. This has led to increased research in optimizing lithographic masks to pre-compensate for distortions introduced by the lithographic process. This is called mask optimization. In this contest, students are provided with a sample lithographic model which simulates the transfer of a mask pattern on to wafer. The mask is assumed to be a pixelated template, where every pixel can be turned on or off, to indicate where light passes through, or is blocked. Contestants are also provided with models to predict the robustness of their pattern i.e. how much variability is in the transferred pattern. Given these tools, the objective is to minimize the variability in the wafer image, as measured by process variability (PV) bands. This is subject to the constraints of runtime and satisfying pattern fidelity i.e. the transferred pattern should resemble the target pattern. Benchmarks are provided in the form of collections of geometric shapes, each of which provides a challenge in printing at sub-wavelength.
ICCAD-2013 CAD竞赛中的掩模优化和基准套件
光学微光刻是一种在晶圆片上印刷一组形状的技术,利用光通过称为掩模的模板传输。反复打印和堆叠这样的形状,以建立电路,使我们能够大批量生产芯片。然而,这种技术现在已经达到了分辨率的基本物理极限。目前193nm波长的光不再足以可靠地传输现在在亚100nm尺寸范围内的图案。这导致在优化光刻掩模的研究增加,以预先补偿由光刻工艺引入的扭曲。这被称为掩码优化。在本次竞赛中,学生将获得一个模拟掩模图案转移到晶圆上的光刻模型样本。遮罩被假定为一个像素化模板,其中每个像素都可以打开或关闭,以指示光线通过或被阻挡的位置。参赛者也提供了模型来预测他们的模式的鲁棒性,即多少可变性是在转移的模式。有了这些工具,目标是最小化晶圆图像的可变性,正如过程可变性(PV)波段测量的那样。这取决于运行时和满足模式保真度的约束,即传输的模式应该与目标模式相似。基准以几何形状集合的形式提供,每个几何形状都对亚波长打印提出了挑战。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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