A 30 Gb/s CMOS driver integrated with silicon photonics MZM

Ke Li, D. Thomson, Shenghao Liu, P. Wilson, G. Reed
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引用次数: 12

Abstract

A voltage mode modulator driver is proposed in the TSMC 65nm low power CMOS process. In the electrical testing, the driver itself can achieve a bit rate of 40Gb/s with the single-ended output swing of 1.65V. Unlike equivalent CML modulator drivers, when the proposed driver is integrated with the silicon photonic MZM, it does not require an additional biasing network. The integrated electro-optic transmitter can achieve 30Gb/s with an extinction ratio of 4.05dB, with the power consumption of main driver being 323mW.
集成硅光子学MZM的30gb /s CMOS驱动器
提出了一种基于TSMC 65nm低功耗CMOS工艺的电压模调制器驱动方案。在电气测试中,驱动器本身可以实现40Gb/s的比特率,单端输出摆幅为1.65V。与等效的CML调制器驱动器不同,当所提出的驱动器与硅光子MZM集成时,它不需要额外的偏置网络。集成电光发射机可达到30Gb/s,消光比为4.05dB,主驱动器功耗为323mW。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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