Modeling and simulation of DC characteristics of a novel NMOS based high pressure sensor

International Conference for Convergence for Technology-2014 Pub Date : 2014-04-06 DOI:10.1109/I2CT.2014.7092211

Soumen Deb, S. Baishya

{"title":"Modeling and simulation of DC characteristics of a novel NMOS based high pressure sensor","authors":"Soumen Deb, S. Baishya","doi":"10.1109/I2CT.2014.7092211","DOIUrl":null,"url":null,"abstract":"This work utilizes an 0.5 μm NMOS device as a pressure sensor by using a suspended metal gate technology. The gate electrode of Pressure Sensitive Insulated Gate Field Effect Transistor (PSIGFET) is freely suspended by four 1-Mender based serpentine springs at four corner and acts as a pressure sensing diaphragm. The large area requirement of diaphragm is minimizes be using a square shaped membrane of area 0.5 μm × 0.5 μm. The pressure measuring capacity is enhanced by using a Tungsten diaphragm (Modulus of Elasticity=410 GPa) and the device is capable of measuring Pressure in the range of 10-205 MPa. The spring constant of the membrane is determined from Coventorware Simulations of the diaphragm and compared with analytical value (3.8639133×10-4 μm/MPa). The pressure sensitivity of the device is found to be quite good, in the range of 0.1355-0.3167 μA/MPa. The temperature stability of the sensor device is further investigated and the temperature coefficient of pressure sensitivity is found to quite low (0.01-0.02 μA/MPa/10oC) at VGS= 3V indicating that the device is stable again the temperature variation up to 77oC.","PeriodicalId":384966,"journal":{"name":"International Conference for Convergence for Technology-2014","volume":"35 8","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-04-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Conference for Convergence for Technology-2014","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/I2CT.2014.7092211","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

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Abstract

This work utilizes an 0.5 μm NMOS device as a pressure sensor by using a suspended metal gate technology. The gate electrode of Pressure Sensitive Insulated Gate Field Effect Transistor (PSIGFET) is freely suspended by four 1-Mender based serpentine springs at four corner and acts as a pressure sensing diaphragm. The large area requirement of diaphragm is minimizes be using a square shaped membrane of area 0.5 μm × 0.5 μm. The pressure measuring capacity is enhanced by using a Tungsten diaphragm (Modulus of Elasticity=410 GPa) and the device is capable of measuring Pressure in the range of 10-205 MPa. The spring constant of the membrane is determined from Coventorware Simulations of the diaphragm and compared with analytical value (3.8639133×10-4 μm/MPa). The pressure sensitivity of the device is found to be quite good, in the range of 0.1355-0.3167 μA/MPa. The temperature stability of the sensor device is further investigated and the temperature coefficient of pressure sensitivity is found to quite low (0.01-0.02 μA/MPa/10oC) at VGS= 3V indicating that the device is stable again the temperature variation up to 77oC.

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新型NMOS高压传感器直流特性建模与仿真

该工作采用悬浮金属栅技术，利用0.5 μm NMOS器件作为压力传感器。压敏绝缘栅场效应晶体管(PSIGFET)的栅极电极在四个角上由四个基于1-Mender的蛇形弹簧自由悬挂，并充当压敏膜片。使用面积为0.5 μm × 0.5 μm的方形膜可以最大限度地减少对膜片的大面积要求。采用弹性模量为410 GPa的钨片增强了压力测量能力，可测量10-205 MPa范围内的压力。利用Coventorware仿真计算了膜的弹性常数，并与解析值(3.8639133×10-4 μm/MPa)进行了比较。实验结果表明，该器件的压力灵敏度在0.1355 ~ 0.3167 μA/MPa之间，具有良好的压力敏感性。进一步研究了传感器器件的温度稳定性，发现在VGS= 3V时，压力敏感温度系数很低(0.01 ~ 0.02 μA/MPa/10oC)，表明该器件在高达77oC的温度变化下仍然稳定。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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International Conference for Convergence for Technology-2014

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