Introduction of ALD Beryllium oxide gate dielectric for III–V MOS devices

Abstract

Using atomic layer deposited (ALD) Beryllium oxide (BeO) as a gate dielectric for the first time, we present improved surface channel MOSFETs on III–V substrates. We used a self-aligned gate-last process to fabricate MOSFETs on semi-insulating InP substrates with TaN gate electrode. The electrical characteristics of n-MOSFETs and MOS-Capacitors and physical characteristics of the BeO high-κ dielectric film were investigated and are summarized in this paper. BeO gate dielectric n-MOSFETs show excellent surface channel dc output characteristics, supporting high possibility of utilizing it in III–V CMOS technology.