Time evolution of photo-EPR and photo-electrical data on bulk semi insulating GaAs

T. Benchiguer, B. Marí, C. Schwab, U. Desnica
{"title":"Time evolution of photo-EPR and photo-electrical data on bulk semi insulating GaAs","authors":"T. Benchiguer, B. Marí, C. Schwab, U. Desnica","doi":"10.1109/SIM.1992.752705","DOIUrl":null,"url":null,"abstract":"The time evolution of the paramagnetic signals and the photo-current in the same semi-insulating GaAs during 1.2eV illumination at low temperatures can be analyzed within the same charge transfer model. The latter involves neutral compensating donor-acceptor pairs becoming metastable through a charge exchange whose reverse process is hindered by carrier trapping. Since the same set of parameters allows one to describe the transient behaviors in both experiments, there is no need for a configuration metastability for the photoconductivity anomaly and the photoquenchable As/sub Ga/ observed by EPR.","PeriodicalId":368607,"journal":{"name":"Proceedings of the 7th Conference on Semi-insulating III-V Materials,","volume":"161 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1992-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 7th Conference on Semi-insulating III-V Materials,","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SIM.1992.752705","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
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Abstract

The time evolution of the paramagnetic signals and the photo-current in the same semi-insulating GaAs during 1.2eV illumination at low temperatures can be analyzed within the same charge transfer model. The latter involves neutral compensating donor-acceptor pairs becoming metastable through a charge exchange whose reverse process is hindered by carrier trapping. Since the same set of parameters allows one to describe the transient behaviors in both experiments, there is no need for a configuration metastability for the photoconductivity anomaly and the photoquenchable As/sub Ga/ observed by EPR.
块状半绝缘砷化镓的光- epr和光电数据的时间演化
在相同的电荷转移模型下,可以分析相同的半绝缘GaAs在1.2eV低温下顺磁信号和光电流的时间演变。后者涉及中性补偿供体-受体对通过电荷交换变得亚稳态,其反向过程被载流子捕获阻碍。由于相同的一组参数允许在两个实验中描述瞬态行为,因此不需要对光电导率异常和EPR观测到的光猝灭As/sub Ga/的组态亚稳态。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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