Optimization of Bandgap Reference with High PSRR on Deep Submicron

S. Jun
{"title":"Optimization of Bandgap Reference with High PSRR on Deep Submicron","authors":"S. Jun","doi":"10.1109/ICCECE51280.2021.9342379","DOIUrl":null,"url":null,"abstract":"In this paper, optimization of a bandgap reference (BGR) with high power supply reject ration (PSRR) is presented. Voltage reference is an important core modulation in analog integrated circuit (IC), digital-analog hybrid IC and purely digital IC, such as analog-to-digital converter (ADC), digital-to-analog converter (DAC) and power management with high precision voltage or current reference, and is widely used in power managements, wireless environmental sensors and medical electronics. The folded current mirror is used to reduce the reference voltage fluctuation, and the op amp voltage feedback is used to stabilize the voltage fluctuation and MOS capacitor noise reduction. The proposed bandgap reference is based on op amp and optimized in circuit structure, layout & routing and device parameters. The optimized bandgap reference is implemented in a 180nm process, whose reference voltage generated is 1.25018V, the Temperature Coefficient (TC) is 126ppm $/^{\\circ}\\mathrm{C}$ in the temperature range of $- 25^{\\circ}\\mathrm{C}$ to $85^{\\circ}\\mathrm{C}$, and the PSRR is 89.5dB at low frequencies. And the active area occupies $261 \\times 161 \\mu m^{2}$.","PeriodicalId":229425,"journal":{"name":"2021 IEEE International Conference on Consumer Electronics and Computer Engineering (ICCECE)","volume":"44 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2021-01-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2021 IEEE International Conference on Consumer Electronics and Computer Engineering (ICCECE)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICCECE51280.2021.9342379","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
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Abstract

In this paper, optimization of a bandgap reference (BGR) with high power supply reject ration (PSRR) is presented. Voltage reference is an important core modulation in analog integrated circuit (IC), digital-analog hybrid IC and purely digital IC, such as analog-to-digital converter (ADC), digital-to-analog converter (DAC) and power management with high precision voltage or current reference, and is widely used in power managements, wireless environmental sensors and medical electronics. The folded current mirror is used to reduce the reference voltage fluctuation, and the op amp voltage feedback is used to stabilize the voltage fluctuation and MOS capacitor noise reduction. The proposed bandgap reference is based on op amp and optimized in circuit structure, layout & routing and device parameters. The optimized bandgap reference is implemented in a 180nm process, whose reference voltage generated is 1.25018V, the Temperature Coefficient (TC) is 126ppm $/^{\circ}\mathrm{C}$ in the temperature range of $- 25^{\circ}\mathrm{C}$ to $85^{\circ}\mathrm{C}$, and the PSRR is 89.5dB at low frequencies. And the active area occupies $261 \times 161 \mu m^{2}$.
深亚微米高PSRR带隙基准的优化
提出了一种具有高电源抑制比(PSRR)的带隙基准(BGR)的优化方法。参考电压是模拟集成电路(IC)、数模混合集成电路(IC)和纯数字集成电路(如模数转换器(ADC)、数模转换器(DAC)和具有高精度电压或电流参考的电源管理中的重要核心调制,广泛应用于电源管理、无线环境传感器和医疗电子等领域。采用折叠电流镜减小参考电压波动,采用运放电压反馈稳定电压波动,降低MOS电容噪声。该带隙基准电路基于运放,并对电路结构、布局布线和器件参数进行了优化。优化后的带隙基准实现在180nm制程上,产生的参考电压为1.25018V,温度系数(TC)为126ppm $/^{\circ} m{C}$ ~ $85^{\circ}\mathrm{C}$,低频时PSRR为89.5dB。活动面积为261 × 161 μ m^{2}$。
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