Towards Next Generations of Silicon Photonics

S. Crémer, C. Baudot, N. Vulliet, J. Durel, C. Durand, H. Petiton, E. Temporiti, F. Boeuf
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Abstract

Process flow and device performances of an industrial 300mm Silicon Photonics platform demonstrating 25Gb/s per data lane when associated with 55nm BICMOS are presented. Advanced designs targeting 56Gb/s and using this platform are introduced. Device improvements suitable to convert such demonstrators into products are shown. Backside reflector, 40Ghz photodiode as well as WDM capability are presented as some potential process and device evolutions for future Silicon Photonics platforms. Finally laser integration challenges and opportunities are discussed.
迈向下一代硅光子学
介绍了一个工业300mm硅光子平台的工艺流程和器件性能,当与55nm BICMOS相结合时,每个数据通道可达到25Gb/s。介绍了采用该平台以56Gb/s为目标的先进设计方案。显示了适合将此类演示转化为产品的设备改进。后向反射器、40Ghz光电二极管以及波分复用能力是未来硅光子学平台的一些潜在工艺和器件发展方向。最后讨论了激光集成面临的挑战和机遇。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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