Memristor pinched hysteresis loops: Touching points, Part II

D. Biolek, V. Biolková, Z. Kolka
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引用次数: 6

Abstract

Crossing-type and non-crossing-type touching points of higher orders of a pair of arms of memristor pinched hysteresis loop are analyzed. Mathematical conditions of the occurrence of these points are derived for ideal voltage-controlled memristor driven by the sinusoidal voltage.
忆阻器夹紧磁滞回线:接触点,第二部分
分析了锁紧型磁滞回线一对臂的高阶交叉触点和非交叉触点。推导了理想压控忆阻器在正弦电压驱动下出现这些点的数学条件。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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