A 3 Gb/s bipolar phase shifter and AGC amplifier

IEEE International Solid-State Circuits Conference, 1989 ISSCC. Digest of Technical Papers Pub Date : 1989-02-15 DOI:10.1109/ISSCC.1989.48234

H. Rein, R. Reimann, L. Schmidt

{"title":"A 3 Gb/s bipolar phase shifter and AGC amplifier","authors":"H. Rein, R. Reimann, L. Schmidt","doi":"10.1109/ISSCC.1989.48234","DOIUrl":null,"url":null,"abstract":"Two multipurpose bipolar ICs for Gb/s systems fabricated in a 2- mu m standard silicon bipolar technology are presented. The first is a wideband clock phase shifter with continuously adjustable phase (0 to -2 pi ), operating from 300 MHz to 3 GHz, and the second is a single-chip AGC (automatic gain control) amplifier with large dynamic range (40 dB), high voltage gain (40 dB), and high cutoff frequency (2.5 GHz), operating up to 3 Gb/s. The insertion voltage gain versus frequency at the nominal output voltage swing of 400 mV is shown. Flat gain response and nearly constant 3-dB cutoff frequency of 2.55+or-0.05 GHz within the total dynamic range were achieved. The amplifier was driven by a pseudorandom pulse generator at bit rates up to 3 Gb/s. Output eye patterns with nominal voltage swing and wide opening were observed over the dynamic range, and the bit error rate was below the sensitivity of the measuring equipment, 5*10/sup -11/ up to 2.7 Gb/s and increasing to 3*10/sup -10/ at 2.9 Gb/s. Chip micrographs of both circuits are shown.<<ETX>>","PeriodicalId":385838,"journal":{"name":"IEEE International Solid-State Circuits Conference, 1989 ISSCC. Digest of Technical Papers","volume":"22 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1989-02-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"10","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE International Solid-State Circuits Conference, 1989 ISSCC. Digest of Technical Papers","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISSCC.1989.48234","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 10

Abstract

Two multipurpose bipolar ICs for Gb/s systems fabricated in a 2- mu m standard silicon bipolar technology are presented. The first is a wideband clock phase shifter with continuously adjustable phase (0 to -2 pi ), operating from 300 MHz to 3 GHz, and the second is a single-chip AGC (automatic gain control) amplifier with large dynamic range (40 dB), high voltage gain (40 dB), and high cutoff frequency (2.5 GHz), operating up to 3 Gb/s. The insertion voltage gain versus frequency at the nominal output voltage swing of 400 mV is shown. Flat gain response and nearly constant 3-dB cutoff frequency of 2.55+or-0.05 GHz within the total dynamic range were achieved. The amplifier was driven by a pseudorandom pulse generator at bit rates up to 3 Gb/s. Output eye patterns with nominal voltage swing and wide opening were observed over the dynamic range, and the bit error rate was below the sensitivity of the measuring equipment, 5*10/sup -11/ up to 2.7 Gb/s and increasing to 3*10/sup -10/ at 2.9 Gb/s. Chip micrographs of both circuits are shown.<>

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一个3gb /s双极移相器和AGC放大器

介绍了两种采用2 μ m标准硅双极工艺制备的Gb/s系统多用途双极集成电路。第一个是具有连续相位可调(0到-2 pi)的宽带时钟移相器，工作范围为300 MHz至3 GHz;第二个是具有大动态范围(40 dB)、高电压增益(40 dB)和高截止频率(2.5 GHz)的单芯片AGC(自动增益控制)放大器，工作速度高达3 Gb/s。在标称输出电压摆幅为400毫伏时，插入电压增益与频率的关系如图所示。在总动态范围内实现了平坦的增益响应和几乎恒定的3db截止频率为2.55±0.05 GHz。放大器由伪随机脉冲发生器驱动，比特率高达3gb /s。在动态范围内观察到标称电压摆动和大开度的输出眼纹，误码率低于测量设备的灵敏度，5*10/sup -11/高达2.7 Gb/s，在2.9 Gb/s时增加到3*10/sup -10/。两种电路的芯片显微图如图所示。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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IEEE International Solid-State Circuits Conference, 1989 ISSCC. Digest of Technical Papers

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