Probabilistic model of nanometer MIFGMOSFET

Abstract

The probabilistic model of the random variation in drain current of the nanometer multiple input floating-gate MOSFET (MIFGMOSFET) has been proposed in this research. The modeling process has taken the major physical level causes of random variations e.g. random dopant fluctuation and line edge roughness etc., into account. The proposed model have been found to be very accurate since it can fit the probabilistic distributions of normalized random drain current variations of the candidate MIFGMOSFET obtained by using the 90 nm SPICE BSIM4 based Monte-Carlo simulation with 99% confidence.