100 nm square single crystal silicon shear strain gauge

Abstract

Fabrication and characteristics of a /spl sim/100 nm square p-type single crystal silicon four-terminal shear strain gauge (Si FSSG) were described. The shear piezoresistance was measured in order to verify the ability of nano metric scale Si FSSG. The shear piezoresistance coefficient /spl pi//sub 44/ was found to be 77.4/spl times/10/sup -11/ Pa/sup -1/ at surface impurity concentration Ns=9/spl times/10/sup 19/ cm/sup -3/. This value was 54.8% larger than the value obtained from p/sup +/ diffused piezoresistor used for the conventional mechanical sensors. A good prospect for the application of Si FSSG to the nano metric mechanical sensors was obtained.