An Ultra-Low Power Temperature Sensor Based on Relaxation Oscillator in Standard CMOS

Wendi Yang, Hanjun Jiang, Zhihua Wang, Wen Jia
{"title":"An Ultra-Low Power Temperature Sensor Based on Relaxation Oscillator in Standard CMOS","authors":"Wendi Yang, Hanjun Jiang, Zhihua Wang, Wen Jia","doi":"10.1109/EDSSC.2018.8487078","DOIUrl":null,"url":null,"abstract":"This work presents an ultra-low power CMOS temperature sensor in $0.13\\mu \\mathrm {m}$ standard CMOS process with an area of 0.0014mm2 and a power consumption of $0.15\\mu \\mathrm {W}$. CMOS transistors operating in subthreshold region generate the PTAT current, and a relaxation oscillator converts the current into frequency, which is digitalized by a following counter. The obtained oscillation frequency is nearly linear to the temperature, and a two-point calibration is applied to reduce the temperature spread in the range −0.27°C to 0.36°C.","PeriodicalId":279745,"journal":{"name":"2018 IEEE International Conference on Electron Devices and Solid State Circuits (EDSSC)","volume":"151 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 IEEE International Conference on Electron Devices and Solid State Circuits (EDSSC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EDSSC.2018.8487078","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 4

Abstract

This work presents an ultra-low power CMOS temperature sensor in $0.13\mu \mathrm {m}$ standard CMOS process with an area of 0.0014mm2 and a power consumption of $0.15\mu \mathrm {W}$. CMOS transistors operating in subthreshold region generate the PTAT current, and a relaxation oscillator converts the current into frequency, which is digitalized by a following counter. The obtained oscillation frequency is nearly linear to the temperature, and a two-point calibration is applied to reduce the temperature spread in the range −0.27°C to 0.36°C.
基于标准CMOS弛豫振荡器的超低功耗温度传感器
本工作提出了一种超低功耗CMOS温度传感器,采用$0.13\mu \ mathm {m}$标准CMOS工艺,面积为0.0014mm2,功耗为$0.15\mu \ mathm {W}$。工作在亚阈值区域的CMOS晶体管产生PTAT电流,弛豫振荡器将电流转换为频率,并通过以下计数器进行数字化。得到的振荡频率与温度几乎呈线性关系,并采用两点校准以减少- 0.27°C至0.36°C范围内的温度蔓延。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术官方微信