VUV spectroscopy of nominally pure and rare-earth ions doped LiCaAIF6 single crystals as promising materials for 157 nm photolithography

Abstract

Recently it was found that birefringence is induced in CaF2 crystals when they are illuminated with laser light at 157 nm. Taking into consideration that CaF2 is the only optical material used in 157 nm photolithography today, the possibility to use new wide band gap fluoride crystals as optical elements for 157 nm photolithography, even those of non-cubic symmetry, should be considered. Additionally fluoride dielectric crystals with wide band gaps doped with trivalent rare-earth (RE) ions can be used as passive or active optical elements int eh VUV. For doped crystals, applications depend on the structure of the energy level pattern of the 4fn-15d electronic configuration and RE ion concentration. In this work we are exploiting the use of wide band gap fluoride dielectric crystals doped with RE ions. The laser induced fluorescence spectrum at 157 nm, and the absorption spectra of the LiCaAlF6 crystals, pure and doped with RE ions, were investigated in the VUV region of the spectrum. A new m4tehod for monitoring RE concentration in wide band gap fluoride crystals, that is based on vibrating sample magnetometer measurement is presented as well.