Modeling of 2D bias control in overlap region of high-voltage MOSFETs for accurate device/circuit performance prediction

Abstract

High-voltage MOSFETs enable wide biasrange applications realized only by optimizing the device structure. We have developed the compact model HiSIM_HV 2.0.0, based on the potential distribution in the device, which is useful for both device and circuit optimizations. By considering two device-structure dependent potentials, the internal node potential within the high resistive drift region and the potential underneath the gate overlap region, the model can reproduce I–V characteristics for a wide range of structure variations without additional fitting parameters.