Reduction of the output conductance in InAlAs/InGaAs HEMTs with 0.15 /spl mu/m gates

Abstract

We have optimized the layer structure and the width of lateral gate recess in lattice matched InAlAs/InGaAs High Electron Mobility Transistors (HEMTs) to reduce the output conductance and kink-effect. Very low output conductances less than 30 mS/mm lead to excellent f/sub max/-values (maximum stable gain) of more than 320 GHz for gate lengths of 0.51 /spl mu/m.