{"title":"Microwave and Millimeter-Wave Transistor Devices","authors":"Y. Takayama","doi":"10.1109/EUMA.1986.334178","DOIUrl":null,"url":null,"abstract":"This paper will review the recent advances in microwave and millimeter-wave, especially above X-band, transistors and monolithic integrated circuits in Japan. GaAs and related-compound semiconductor devices including GaAs MESFETs, GaAs MMICs, two-dimensional electron gas transistors and heterojunction bipolar transistors will be focussed.","PeriodicalId":227595,"journal":{"name":"1986 16th European Microwave Conference","volume":"17 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1986-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1986 16th European Microwave Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EUMA.1986.334178","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
This paper will review the recent advances in microwave and millimeter-wave, especially above X-band, transistors and monolithic integrated circuits in Japan. GaAs and related-compound semiconductor devices including GaAs MESFETs, GaAs MMICs, two-dimensional electron gas transistors and heterojunction bipolar transistors will be focussed.