A Compact 14 GS/s 8-Bit Switched-Capacitor DAC in 16 nm FinFET CMOS

P. Caragiulo, O. E. Mattia, A. Arbabian, B. Murmann
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引用次数: 4

Abstract

This paper presents a compact DAC for digital-intensive transmitter architectures. To minimize area and to leverage the strengths of FinFET CMOS, the implementation departs from the traditional current steering approach and consists mainly of inverters and sub-femtofarad switched capacitors. The 14 GS/s 8-bit design occupies only 0.011 mm2 and supports up to 0.32 Vpp signal swing across its differential 100 Ω load. It achieves IM3 < −45.3 dBc across the first Nyquist zone while consuming 50 mW from a single 0.8 V supply.
一个紧凑的14 GS/s 8位开关电容DAC在16纳米FinFET CMOS
本文提出了一种用于数字密集型发射机架构的紧凑型DAC。为了最小化面积并利用FinFET CMOS的优势,该实现与传统的电流转向方法不同,主要由逆变器和亚飞法拉开关电容器组成。14 GS/s 8位设计仅占用0.011 mm2,在其差分100 Ω负载上支持高达0.32 Vpp的信号摆幅。它在第一个奈奎斯特区实现IM3 < - 45.3 dBc,同时从单个0.8 V电源消耗50 mW。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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