Coping with RC(L) interconnect design headaches

L. Pileggi
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引用次数: 65

Abstract

Physical interconnect effects have a dominant impact on today's deep submicron IC designs. In this tutorial paper we will describe the technology trends which have brought about this interconnect dominance, then consider some of the modeling and analysis approximations available for both pre- and post-layout interconnect design. This coverage will not be an exhaustive summary, but one that is primarily focused on moment-based analysis techniques, from the Elmore delay, to the more recent advances in moment-matching approximations, and the corresponding nonlinear driver/load interfaces. Future modeling, analysis, and design challenges will be considered throughout this paper.
处理RC(L)互连设计难题
物理互连效应对当今的深亚微米集成电路设计具有主要影响。在本教程中,我们将描述带来这种互连优势的技术趋势,然后考虑一些可用于布局前和布局后互连设计的建模和分析近似。这篇报道不会是一个详尽的总结,但主要集中在基于矩的分析技术上,从Elmore延迟,到矩匹配近似的最新进展,以及相应的非线性驱动/负载接口。未来的建模、分析和设计挑战将贯穿全文。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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