Memristor device fabricated from doped graphene oxide

Abstract

Resistive switching (RS) is the basic phenomenon for the operation of resistive memory ReRAM. A specific electrical voltage is applied in the MIM (metal-insulator-metal) device, it can undergo switching from its initial insulator resistance state (HRS - high resistance state) to a low resistance state (LRS). There is a strong relationship between the materials used in the composition of these devices and their characteristics. In this work, resistive memory based on silver-doped graphene oxide was characterized and its voltage response varying as a function of voltage was obtained. SET and RESET are caused by the redox reactions of graphene oxide layer at the interface between electrodes. Defects as oxygen vacancies in oxide material play a key role for the resistive switching. There is another factor that can influence the operation of this device and threshold switching: silver present in the graphene oxide composition could interfere with the filament formation. In summary, the resistive switching behavior of rGO+0.1%Ag/GO+1%Ag/Al device was investigated, which reveals electric characteristics and SET/RESET voltages. In addition, a threshold switching characteristic is revealed.