A 0.3V VDDmin 4+2T SRAM for searching and in-memory computing using 55nm DDC technology

Abstract

A 4+2T SRAM is proposed that offers searching and logic functions. The cell uses the N-well as the write wordline (WL) and eliminates the access transistors. Decoupled read paths enable reliable multi-word activation for in-memory Boolean logic functions. The SRAM can reconfigure to BCAM/TCAM for searching operations, with 0.13fJ/search/bit at 0.35V. Forty test chips in 55nm deeply depleted channel (DDC) technology achieve worst-case 0.3 V VDDmin.