Ultra-low-voltage driver for large load capacitance in 130nm CMOS technology

Michal Sovcík, M. Kovác, D. Arbet, V. Stopjaková
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引用次数: 3

Abstract

This paper presents design of the inverter-based driver for low-voltage applications, with topology for boosting the transistors overdrive voltage. The proposed driver topology was designed through detailed circuit analysis and optimization, and it is suitable for use in a switched capacitor charge pump. The driver was designed in 130 nm CMOS technology and verified by simulations including technology corners. Core of the proposed driver — the inverter uses power supply voltage of 200 mV. The whole boosted driver achieves a propagation delay of 9.2 ns and energy consumption of 92.12 µW for the value of load capacitor is 100 pF. Due to the low-power consumption, the proposed driver was satisfactory used in a self-powered charge pump systems.
超低电压驱动器,适用于130nm CMOS技术的大负载电容
本文设计了一种基于逆变器的低压驱动电路,采用拓扑结构提高了晶体管的超驱动电压。通过详细的电路分析和优化设计了所提出的驱动器拓扑结构,该拓扑结构适用于开关电容电荷泵。该驱动器采用130 nm CMOS工艺设计,并通过技术角仿真验证。提出的驱动核心——逆变器采用200 mV的供电电压。在负载电容为100 pF时,整个升压驱动器的传输延迟为9.2 ns,能耗为92.12µW,功耗低,可用于自供电电荷泵系统。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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