Pulsed laser annealing of zinc - implanted InP

Abstract

The pulsed laser annealing technique can eliminate many induced defects from zinc-implantation InP and change amorphous into mono-crystal on the surface of InP sample. The optimal annealing condition for pulsed ruby laser is that laser power density is about 0-44J/cm/sup 2/ and time width is 70 ns. If the pulsed laser radiating power density is too high or too low, the surface of sample will produce poly-crystal. On the optimal annealing condition, the shallow p-n junction and the high precipitous accepter concentration distribution have been obtained. The maximum accepter concentration will exceed 10/sup 19/cm/sup -3/. The junction depth is less than 0.12 /spl mu/m. The proposed macro-kinetic model can be employed to explain the phenomenon and the physical processes in pulsed laser annealing.