Temperature dependence of current-voltage of Al/p-Si(100) and Ti/p-Si(100) Schottky barrier diodes

Abstract

The current-voltage (I-V) characteristics on Al/p-Si (100) and Ti/p-Si (100) Schottky barrier diodes (SD) in the temperature range of 25–85°C were carried out. The Schottky barrier height (SBH) and ideality factor n calculated for both metal-semiconductor (MS) structures by using thermionic emission theory showed a strong dependence on temperature. The metals employed (titanium and aluminum) during the fabrication process were characterized to obtain electrical and physical parameters.