A 1.2 V, Inductorless, Broadband LNA in 90 nm CMOS LP

Abstract

This paper presents a novel broadband, inductorless, resistive-feedback CMOS LNA. The LNA is designed for the frequency band 0.4 - 1 GHz. The measured power gain of the LNA is 16 dB at 1 GHz and the 3-dB bandwidth is 2 GHz. A noise figure of 3.5 dB and an IIP3 of -17 dBm are measured at 900 MHz. The S11 is better than -10 dB in the frequency band from 300 MHz up to 1 GHz. The current consumption is 14 mA from a 1.2 V supply. The circuit is designed in a baseline CMOS 90 nm low power (LP) process.