Properties of amorphous SiC thin films prepared by plasma enhanced chemical vapour deposition

Abstract

The properties of hydrogenated amorphous silicon carbide films prepared by plasma enhanced chemical vapour deposition were studied by combination of infrared (IR), RBS, ERD (elastic recoil detection) measurement. IR result shoved the presence Si-C, Si-H, C-H bonds. The compositions of the silicon, carbon and hydrogen in the films were found to be dependent on the preparation conditions.