{"title":"0.25–4 ns 185 MS/s 4-bit pulse-shrinking time-to-digital converter in 130 nm CMOS using a 2-step conversion scheme","authors":"Young Jun Park, F. Yuan","doi":"10.1109/MWSCAS.2015.7282113","DOIUrl":null,"url":null,"abstract":"An area and power efficient pulse-shrinking delay-line time-to-digital converter (TDC) using a 2-step conversion scheme is presented. The proposed TDC quantizes time variables using a coarse pulse-shrinking TDC with a large per-stage time shrinkage and a fine pulse-shrinking TDC with a small per-stage time shrinkage. It offers low power and silicon consumption, and good linearity without sacrificing resolution. The proposed TDC has been designed in an IBM 130 nm 1.2 V CMOS technology. The input range of the TDC is 4 ns, conversion rate 185 MS/s, resolution 250 ps, INL of 1 LSB, and figure-of-merit 0.163 pJ/conv.step.","PeriodicalId":216613,"journal":{"name":"2015 IEEE 58th International Midwest Symposium on Circuits and Systems (MWSCAS)","volume":"84 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 IEEE 58th International Midwest Symposium on Circuits and Systems (MWSCAS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MWSCAS.2015.7282113","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 7
Abstract
An area and power efficient pulse-shrinking delay-line time-to-digital converter (TDC) using a 2-step conversion scheme is presented. The proposed TDC quantizes time variables using a coarse pulse-shrinking TDC with a large per-stage time shrinkage and a fine pulse-shrinking TDC with a small per-stage time shrinkage. It offers low power and silicon consumption, and good linearity without sacrificing resolution. The proposed TDC has been designed in an IBM 130 nm 1.2 V CMOS technology. The input range of the TDC is 4 ns, conversion rate 185 MS/s, resolution 250 ps, INL of 1 LSB, and figure-of-merit 0.163 pJ/conv.step.