Electrical Noise Analysis of L-Shaped Gate Tunnel Field Effect Transistor

Abstract

The proposed work presents comparative study of electrical noise analysis of heterojunction conventional tunneling-field-effect-transistors (TFET) and L-shaped gate TFET (LTFET). The study of different parameters like transfer characteristics, output characteristics, and electrical noise analysis is performed using Synopsys TCAD tool. Similarly, the effect of noise on conventional TFET and LTFET has been investigated at 1 MHz and 1 GHz and high frequency (HF) to check the viability of proposed devices. In LTFET device structures, the gate-source overlapping accelerates the electric field, improves the tunneling rate and increases the drain current. The gate-source overlapping region used in LTFET enhances the tunneling area that further enhance the drain current. The proposed LTFET device shows good performance in terms of ION-IOFF ratio and is well suited for applications operating at low power.