Investigation of Self-Heating Effect in Forksheet FETs for Sub-3-nm Node

Abstract

Self-heating effect (SHE) in silicon forksheet field-effect transistors (FSFETs) and nanosheet FETs (NSFETs) for sub-3-nm node was analyzed using calibrated TCAD. For SHE investigation, electrical and thermal properties, and reliability were assessed according to channel width $(W_{CH})$. A silicon-nitride wall deteriorated the thermal properties of FSFETs; however, FSFETs were electrically superior to NSFETs. Furthermore, as $W_{CH}$ decreases, FSFETs exhibited lower lattice temperature and more improved reliability than NSFETs. Therefore, these quantitative comparisons revealed FSFETs surpassed NSFETs in terms of SHE.