Single-event effects characterization of a 12-bit 200MSps A-to-D converter in 32nm SOI CMOS with MilliBeam™ and broad-beam heavy-ions

Abstract

A 12-bit 32nm SOI CMOS pipeline ADC clocked at 200 MSps was tested at LBNL with the MilliBeam™ technique and showed no upsets with LET up to 30.9 MeV·cm²/mg (Kr), while 1-sample SETs up to 600 LSB in amplitude were observed with broad-beam exposure at TAMU with 0°, 60° incidence angles (Xe and Au), and LET up to 170 MeVcm²/mg.