A Cost-Effective Embedded Nonvolatile Memory with Scalable LEE Flash®-G2 SONOS for Secure IoT and Computing-in-Memory (CiM) Applications

Abstract

We introduce a cost-effective, reliable and energy efficient embedded flash memory technology and its applications. A charge trapping type of Silicon-Oxide-Nitride-Oxide-Silicon (SONOS) with twin select-gates structure has been demonstrated on 55-nm bulk CMOS technology. It is potentially scalable on advanced fully depleted (FD)-SOI or 3D Fin-FET devices below 28-nm node. Those feasibilities are shown by TCAD simulations and existing 55-nm planar bulk silicon data. Secure and low-power applications are introduced that are using nonvolatile (NV)-SRAM by combining with SRAM cell and flash cell. Besides, analog computing-inmemory (CiM) based on flash is also introduced for energy efficient artificial intelligence (AI) applications in edge computing.