Programmable set to monitor charge state change of MIS devices under high-fields

Abstract

In modern microelectronics high fields are an essential condition of devices based on metal-insulator-semiconductor (MIS) structures what is caused by downscaling of nodes of semiconductor manufacturing processes. Under these conditions, a possibility of charge degradation increases what can result in dielectric film breakdown and following integrated circuit (IC) failure. Therefore, a designing of configurable set to monitor charge state change of MIS devices under high fields is a relevant task. In order to implement this, we developed a programmable set which is based on a combined evaluation of the charge state of MIS devices being under electron injection. The set consists of a unit for injection monitoring and a unit to measure C-V curves.