Evaluation of Non-Linear Functional Equivalent Circuit Models for a GaAs MESFET, and Their Application to Optimum Power Amplifier Design

Abstract

Three different non-linear equivalent circuit models are developed for the GaAs MESFET, based on Y-parameters, S-parameters, and a hybrid parameter system. A comparison is carried out between the optimum added-power conditions predicted by each model for a single-frequency power amplifier, and the predictions are also tested against a full time-domain analysis of the amplifier.