A High Efficiency, Ka-Band Pulsed Gallium Nitride Power Amplifier for Radar Applications

2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2016-10-01 DOI:10.1109/CSICS.2016.7751021

P. Blount, S. Huettner, Ben P. Cannon

引用次数: 14

Abstract

The design and performance of a three stage Ka-band power amplifier MMIC utilizing a 0.2 um GaN on SiC HEMT process technology is presented. Measured both pulsed and CW, the design demonstrates over 5 W of saturated power with an associated power added efficiency (PAE) of 41%. The die size is 2.62x1.62 mm.

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用于雷达的高效率、ka波段脉冲氮化镓功率放大器

介绍了一种采用0.2 um GaN on SiC HEMT工艺的三级ka波段功率放大器MMIC的设计和性能。在脉冲和连续波测试中，该设计显示出超过5w的饱和功率，相关功率附加效率(PAE)为41%。模具尺寸为2.62x1.62 mm。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)

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