{"title":"A Compact 50W GaN MMIC Power Amplifier for C-band applications","authors":"N. Nguyen, Sanghun Lee, C. Huynh","doi":"10.1109/ICCE55644.2022.9852079","DOIUrl":null,"url":null,"abstract":"This paper describes a C-band monolithic microwave integrated circuit (MMIC) high power amplifier (HPA) for Synthetic Aperture Radar (SAR) exploiting 0.25 $\\mu$m GaN HEMT process on a SiC substrate. The 2-stage HPA has the output power of 50-Watt, power-added efficiency (PAE) of 45.5-49.6% and an associated power gain of 20 dB from 5 to 7 GHz. With a compact die size of 4.5 mm x 2.625 mm, the HPA exhibits the output power density of 4.23 W/mm2 showing the strong potential in SAR systems and others.","PeriodicalId":388547,"journal":{"name":"2022 IEEE Ninth International Conference on Communications and Electronics (ICCE)","volume":"15 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2022-07-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 IEEE Ninth International Conference on Communications and Electronics (ICCE)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICCE55644.2022.9852079","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
This paper describes a C-band monolithic microwave integrated circuit (MMIC) high power amplifier (HPA) for Synthetic Aperture Radar (SAR) exploiting 0.25 $\mu$m GaN HEMT process on a SiC substrate. The 2-stage HPA has the output power of 50-Watt, power-added efficiency (PAE) of 45.5-49.6% and an associated power gain of 20 dB from 5 to 7 GHz. With a compact die size of 4.5 mm x 2.625 mm, the HPA exhibits the output power density of 4.23 W/mm2 showing the strong potential in SAR systems and others.