Effects of trap position and number dependence of threshold voltage in p-MOSFETs

Abstract

This work focuses on modeling of the impact of trap position and number dependence on the variation of threshold voltages in nanoscale p-MOSFETs. Reliability degradation mechanisms are studied using four-state nonradiative multiphonon model. A novel reliability technology TCAD framework has been developed to predict the threshold voltage variation during device design phase. The influence of trap number and spatial distribution on the device threshold voltage has been investigated from simulation.