Salicidation Processes and CoSi2 Resistance Study

Abstract

The effect of multiple Si processes on the intrinsic sheet resistance of CoSi2 resistors is investigated in this article. It is discovered that CoSi2 intrinsic sheet resistance is not a simple function of the CoSi thickness, but rather depends on many other factors including CD related poly grain size, the mushroom effect, diffusion of As implant during silicidation anneal, and the existence of Ti-Under layer. The findings of this study provided an accurate and stable resistance control on Silicided poly resistor applications.