Temperature influence on power consumption and time delay

A. Golda, A. Kos
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引用次数: 15

Abstract

Both the energy consumption and the propagation time delay are very critical parameters of contemporary integrated circuits. It is obvious that a circuit should consume energy as small as possible and ought to work with maximum speed and efficiency. However, these parameters are dependent on temperature, which can change with both external (e.g. high surrounding temperature) and internal (e.g. power dissipated in the circuit) conditions. The article presents the temperature influence on energy consumption and propagation time delay of CMOS ASIC circuits at the example of AMI Semiconductor 0.7 /spl mu/ CMOS C07MD technology (former Alcatel MIETEC CMOS 0.7 /spl mu/m-C07MA-C07MD). The gate was tested under the two conditions: controlled by ideal trapezoid pulse signal, and controlled by real output signal that came from previous gate.
温度对功耗和时延的影响
能量消耗和传输时延是当代集成电路的重要参数。很明显,一个电路应该消耗尽可能小的能量,并且应该以最大的速度和效率工作。然而,这些参数依赖于温度,温度会随着外部(例如高环境温度)和内部(例如电路中的功耗)条件而变化。本文以AMI半导体0.7 /spl mu/ CMOS C07MD技术(原Alcatel MIETEC CMOS 0.7 /spl mu/m-C07MA-C07MD)为例,介绍了温度对CMOS ASIC电路能耗和传播时延的影响。在理想梯形脉冲信号控制和原栅极实际输出信号控制两种情况下对该栅极进行了测试。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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