3D stacked SOI-CMOS pixel detector using Au micro-bump junctions

Abstract

This paper presents the experimental result of a fabricated prototype with 3-μm-diameter Au cone-bump connections with adhesive injection, and compares it with that of an indium microbump (μ-bump). The resistance of the 3-μm-diameter Au cone bump is approximately 0.25 Ω. We also investigated the influence of stress caused by bump junction on the MOS characteristics.