Multipulse degradation of fused silica surfaces at 351 nm

S. Ly, T. Laurence, N. Shen, B. Hollingsworth, M. Norton, J. Bude
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Abstract

We investigate the multipulse degradation of fused silica surfaces exposed at 351 nm for up to 109 pulses at pulse fluences greater than 10 J/cm2. In vacuum, the transmission loss increases as a function of the number of shots at low pulse intensity. However, as the pulse intensity increases, the transmission loss decreases and is not measureable above a certain intensity. Transmission loss is highest when measured at shorter wavelengths, and decreases towards the IR. Absorption is the primary mechanism that leads to transmission loss and is from photo-reduction of the silica surface.
熔融二氧化硅表面在351nm处的多脉冲降解
我们研究了暴露在351nm下的熔融二氧化硅表面的多脉冲降解,脉冲影响大于10j /cm2。在真空中,在低脉冲强度下,传输损耗随发射次数的增加而增加。但随着脉冲强度的增大,传输损耗减小,超过一定强度时传输损耗不可测量。传输损耗在较短波长测量时最高,向红外方向减小。吸收是导致传输损失的主要机制,是由二氧化硅表面的光还原引起的。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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