Improved Endurance with Electron-Only Switching in Ferroelectric Devices

Abstract

We demonstrate, for the first time, endurance characteristics of ferroelectric devices (i.e. n-/p-FeFETs and n+/p+ Fe-MOSCAPs) by extracting memory windows from C-VG characteristics. By comparing ambipolar (both type of carriers) switching and unipolar (one type of carrier) switching in ferroelectric devices, we concluded that ferroelectric switching with electrons only significantly improves device endurance, and hence proposed junctionless FeFETs with n+ channel for maximizing endurance of ferroelectric memory.