{"title":"A low-power true random number generator using random telegraph noise of single oxide-traps","authors":"R. Brederlow, R. Prakash, C. Paulus, R. Thewes","doi":"10.1109/ISSCC.2006.1696222","DOIUrl":null,"url":null,"abstract":"A true random number generator is realized by utilizing the noise produced by single oxide traps in small-area MOSFETs in combination with built-in redundancy. The circuit has an area of 0.009mm2 in 0.12mum CMOS and consumes 50muW at 200kb/s random output data. The concept is robust against environmental noise and supply-voltage variations and is thus suitable for operation within security controllers","PeriodicalId":166617,"journal":{"name":"2006 IEEE International Solid State Circuits Conference - Digest of Technical Papers","volume":"84 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2006-09-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"119","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2006 IEEE International Solid State Circuits Conference - Digest of Technical Papers","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISSCC.2006.1696222","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 119
Abstract
A true random number generator is realized by utilizing the noise produced by single oxide traps in small-area MOSFETs in combination with built-in redundancy. The circuit has an area of 0.009mm2 in 0.12mum CMOS and consumes 50muW at 200kb/s random output data. The concept is robust against environmental noise and supply-voltage variations and is thus suitable for operation within security controllers