A Ku-band high-isolation SPDT switch in 0.35um SiGe BiCMOS technology

Abstract

In this paper, a compact high isolation 14–18 GHz SPDT switch using triple-well transistors based on 0.35µm SiGe BiCMOS process is proposed. Improved series-shunt-shunt topology is used in this design to increase the isolation and to reduce the insertion loss concurrently. In order to improve the power handling capability, body-floating technique is employed and analyzed. The simulation results shown that in the interested frequency band of 14–18 GHz, the insertion loss of the ON state path is better than 1.5 dB, and the isolation of the OFF state path is higher than 44dB. The P1dB of the ON state path at center frequency 15.5 GHz is 13dBm, and the chip size is 0.125 mm2.