A Study on Development of CNTFET Based Analog and Digital Circuits

Manoj Kumar Tomar, Vimlesh Singh, Laxya Laxya
{"title":"A Study on Development of CNTFET Based Analog and Digital Circuits","authors":"Manoj Kumar Tomar, Vimlesh Singh, Laxya Laxya","doi":"10.1109/RDCAPE52977.2021.9633592","DOIUrl":null,"url":null,"abstract":"In the electronic manufacturing industry approximately 95% of electronic devices are manufactured by silicon. Due to excessive use of silicon its reaches to the saturation level because to exploit more properties of its make this extraction process expensive. Carbon is one such material which has potential to replace silicon. Carbon nano tubes (CNT) are one of promising structure of carbon atoms that work on 22nm more effectively than silicon. Design of Field effect transistor (FET) by the CNT is encouraging because it enriches the fundamental silicon-based Metal oxide semiconductor field effect transistor (MOSFET) and it could lead to an increase in the effectiveness of Moore's law even further. The CNT-based FET (Cntfet) is a CNTFET that has been used appreciably within the implementation of electronic circuits. This article gives the maximum superior literature associated with carbon nanotube structure, CNT based FET and CNTFET associated circuit design. An assessment based on analog and digital circuits on design by CNTFET is discussed. CNTFET has advanced the overall performance of each analog and digital circuit. The work is going to be terribly helpful for folks operating within the field of Carbon Nano Tube based analog and digital electronic circuit design.","PeriodicalId":424987,"journal":{"name":"2021 4th International Conference on Recent Developments in Control, Automation & Power Engineering (RDCAPE)","volume":"3 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2021-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2021 4th International Conference on Recent Developments in Control, Automation & Power Engineering (RDCAPE)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RDCAPE52977.2021.9633592","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
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Abstract

In the electronic manufacturing industry approximately 95% of electronic devices are manufactured by silicon. Due to excessive use of silicon its reaches to the saturation level because to exploit more properties of its make this extraction process expensive. Carbon is one such material which has potential to replace silicon. Carbon nano tubes (CNT) are one of promising structure of carbon atoms that work on 22nm more effectively than silicon. Design of Field effect transistor (FET) by the CNT is encouraging because it enriches the fundamental silicon-based Metal oxide semiconductor field effect transistor (MOSFET) and it could lead to an increase in the effectiveness of Moore's law even further. The CNT-based FET (Cntfet) is a CNTFET that has been used appreciably within the implementation of electronic circuits. This article gives the maximum superior literature associated with carbon nanotube structure, CNT based FET and CNTFET associated circuit design. An assessment based on analog and digital circuits on design by CNTFET is discussed. CNTFET has advanced the overall performance of each analog and digital circuit. The work is going to be terribly helpful for folks operating within the field of Carbon Nano Tube based analog and digital electronic circuit design.
基于CNTFET的模拟和数字电路开发研究
在电子制造业中,大约95%的电子设备是由硅制造的。由于硅的过量使用,使其达到饱和水平,因为要开发其更多的性质,使得该提取过程成本高昂。碳就是这样一种有潜力取代硅的材料。碳纳米管(CNT)是一种很有前途的碳原子结构,它比硅更有效地在22nm上工作。碳纳米管设计场效应晶体管(FET)是令人鼓舞的,因为它丰富了基本的硅基金属氧化物半导体场效应晶体管(MOSFET),它可能导致摩尔定律的有效性进一步提高。基于碳纳米管的场效应管(Cntfet)是一种在电子电路实现中得到广泛应用的碳纳米管。本文给出了有关碳纳米管结构、基于碳纳米管的场效应管和相关电路设计的最优文献。讨论了基于模拟电路和数字电路的CNTFET对设计的评价。CNTFET提高了各个模拟和数字电路的综合性能。这项工作将对基于碳纳米管的模拟和数字电子电路设计领域的人们有很大的帮助。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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