{"title":"Dynamic simulation model of a quasi-Z-Source inverter with parasitic resistances and saturable inductor","authors":"Mateo Bašić, D. Vukadinović, M. Polić","doi":"10.1109/PEE.2017.8171663","DOIUrl":null,"url":null,"abstract":"In this paper, an advanced simulation model of a quasi-Z-Source inverter (qZSI) is presented. The model has been built in MATLAB-Simulink by using only standard blocks. It is based upon the qZSI's nonlinear differential equations, i.e., without resorting to state-space averaging and small-signal analysis. In the proposed model, the equations for the non-shoot-through state and those for the shoot-through state are alternately executed, depending on the qZSI state. The parasitic resistances of the qZSI capacitors/inductors as well as the magnetic saturation of the qZSI inductors are all accounted for. The impact of these factors on the qZSI's transient and steady-state performance is evaluated and analyzed both on the simulation and experimental level.","PeriodicalId":243099,"journal":{"name":"2017 International Symposium on Power Electronics (Ee)","volume":"173 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 International Symposium on Power Electronics (Ee)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/PEE.2017.8171663","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 4
Abstract
In this paper, an advanced simulation model of a quasi-Z-Source inverter (qZSI) is presented. The model has been built in MATLAB-Simulink by using only standard blocks. It is based upon the qZSI's nonlinear differential equations, i.e., without resorting to state-space averaging and small-signal analysis. In the proposed model, the equations for the non-shoot-through state and those for the shoot-through state are alternately executed, depending on the qZSI state. The parasitic resistances of the qZSI capacitors/inductors as well as the magnetic saturation of the qZSI inductors are all accounted for. The impact of these factors on the qZSI's transient and steady-state performance is evaluated and analyzed both on the simulation and experimental level.