Development of a Pulsed IMPATT Diode Amplifier

1986 IEEE MTT-S International Microwave Symposium Digest Pub Date : 1986-06-02 DOI:10.1109/MWSYM.1986.1132121

B. E. Sigmon, T.W. Van Alstyne

引用次数: 0

Abstract

The impedance transformation properties of parallel coupled lines have been used to develop broadband reflection amplifiers operating in X-band. These amplifiers have demonstrated peak powers of 40 watts (single IMPATT diode), 63 watts (two diode combiner), and 110 watts (four diode combiner). 3 dB bandwidths of 1.4 to 3 GHz (14 to 30%) have been attained.

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脉冲IMPATT二极管放大器的研制

利用并联耦合线的阻抗变换特性，研制了工作在x波段的宽带反射放大器。这些放大器的峰值功率为40瓦(单个IMPATT二极管)，63瓦(两个二极管组合)和110瓦(四个二极管组合)。已获得1.4至3ghz(14%至30%)的3db带宽。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

1986 IEEE MTT-S International Microwave Symposium Digest

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