{"title":"Relaxation Oscillation in GST-Based Phase Change Memory Devices","authors":"D. C. Jackson, M. Nardone, V. Karpov, I. Karpov","doi":"10.1109/IMW.2009.5090605","DOIUrl":null,"url":null,"abstract":"The purpose of this work is to investigate the material and device properties of GST-based PCM by studying relaxation oscillations [1, 2]. Our experimental results relate oscillation characteristics to applied voltage, load resistance and device thickness.","PeriodicalId":113507,"journal":{"name":"2009 IEEE International Memory Workshop","volume":"8 8 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2009-05-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2009 IEEE International Memory Workshop","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IMW.2009.5090605","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
The purpose of this work is to investigate the material and device properties of GST-based PCM by studying relaxation oscillations [1, 2]. Our experimental results relate oscillation characteristics to applied voltage, load resistance and device thickness.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
